Zirconia fiber membranes based on PVDF as high-safety separators for lithium-ion batteries using a papermaking method

Journal of Solid State Electrochemistry - Lithium-ion batteries have been receiving more and more attention because of the energy crisis. As an important subassembly of lithium-ion batteries, the...     

Radical Heteroarylalkylation of Alkenes via Three‐Component Docking‐Migration Thioetherification Cascade

A novel, rational‐designed approach to access various heteroaryl‐substituted alkyl thioethers was developed via docking‐migration cascade process. By utilizing three components involving alkene, dual‐function reagent, and thioetherificating reagent, radical heteroarylalkylation of alkenes followed by thiolation of the alkyl radical intermediates proceeded smoothly, manifesting well compatibility of substrates and cascade transformations. Furthermore, this protocol also features mild conditions, broad substrate scope, and wide product diversity.     

Study on the Interaction and Properties of Cucurbit[8]uril with Oroxin B

The interaction between cucurbit[8]uril(Q[8]) and oroxin B(ORB) was investigated by UV-visible(UV-Vis) spectroscopy, isothermal titration calorimetry(ITC), mass spectrum(MS) and nuclear magnetic resonance(NMR) spectroscopy. The results showed that ORB formed a 2:1 inclusion complex with Q[8] with a binding constant of 8.266×10⁵ L²·mol^-2. ORB had good scavenging ability for 2,2'-azinobis-(3-ethylbenzthiazoline-6-sulphonate)(ABTS) free radicals(IC₅₀=5.74 μmol/L) and the addition of Q[8] did not significantly affect the antioxidant activity of ORB(IC₅₀=5.76 μmol/L). A phase solubility experiment revealed a 1.86-fold increase in the solubility of ORB when c(Q[8])=100 μmol/L. In vitro drug release experiments showed that the release rate for ORB@Q[8] complex was lower than that of ORB in artificial intestinal juice, and higher than that of ORB in artificial gastric juice.     

Three-Party Semi-Quantum Key Agreement Protocol

International Journal of Theoretical Physics - A semi-quantum key agreement protocol is proposed to allow one quantum participant and two classical ones to negotiate the final shared secret key...     

FeCoCrCuNi高熵合金裂纹及孔洞结构力学与微观构象演化机理的分子动力学模拟研究

本文采用分子动力学方法研究了FeCoCrCuNi高熵合金裂纹及孔洞模型结构在不同轴向拉伸应变速率下的力学与微观结构演化机理. 结果表明：应变速率越高FeCoCrCuNi裂纹结构对应更高的过冲应变和过冲应力，其主要原因是高拉伸速率会导致高强度的BCC结构及孪晶结构的生成，而BCC结构及孪晶结构的产生进而会抑制应力的下降，通过应力-应变曲线，可知FeCoCrCuNi裂纹模型在轴向应力作用下表现为塑性形变. 对于不同尺寸的孔洞FeCoCrCuNi裂纹模型的应力模拟与结构分析，可以得出：孔洞尺寸越大, FeCoCrCuNi裂纹结构对应的过冲应变和过冲应力越小，其主要原因是大尺寸的孔洞造成孔洞之间产生裂纹的，进而会影响这个材料的屈服应变和屈服强度.     

Ligand-Enabled Nickel-Catalyzed Redox-Relay Migratory Hydroarylation of Alkenes with Arylborons

A redox-relay migratory hydroarylation of isomeric mixtures of olefins with arylboronic acids catalyzed by nickel complexes bearing diamine ligands is described. A range of structurally diverse 1,1-diarylalkanes, including those containing a 1,1-diarylated quaternary carbon, were obtained in excellent yields and with high regioselectivity. Preliminary experimental evidence supports the proposed non-dissociated chainwalking of aryl-nickel(II)-hydride species along the alkyl chain of alkenes before selective reductive elimination at a benzylic position. A catalyst loading as low as 0.5 mol % proved to be sufficient in large-scale synthesis while retaining high reactivity, highlighting the practical value of this transformation.     

Investigation of β-Ga_2O_3 films and β-Ga_2O_3/GaN heterostructures grown by metal organic chemical vapor deposition

In this work,(-201) β-Ga_2O_3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD). It is revealed that the β-Ga_2O_3 film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga_2O_3 film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga_2O_3 film and the β-Ga_2O_3/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga_2O_3 film. Moreover, the energy band structure of β-Ga_2O_3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga_2O_3 films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga_2O_3/GaN heterostructures in microelectronic applications.     

Pairwise distance-based heteroscedasticity test for regressions

Science China Mathematics - In this study, we propose nonparametric testing for heteroscedasticity in nonlinear regression models based on pairwise distances between points in a sample. The test...